Three level, six state multilevel magnetoresistive RAM(MRAM)

Abstract

A three level, six state magnetoresistive random access memory (MRAM) cell is developed using four magnetic layers. As the number of memory level increases, the interaction with other magnetic layers increases gradually with decreasing space Cu thickness. The samples were patterned by photolithography and its switching characteristics were measured using an electromagnet with four-point probe method to confirm its multilevel characteristics in small size.