A Coaxial Nozzle Attachment Improving the Homogeneity of the Gas Flow Sputtering

Abstract

The Hollow Cathode Gas Flow Sputtering (GFS) provides special plasma conditions and is of extensive interest as a more affordable alternative to the high vacuum sputtering techniques. In the case of the tubular cathode a circular outlet symmetry stipulates homogeneity issues for both metallic and reactive deposition regimes. Using the results of Direct Simulation Monte Carlo (DSMC), we propose an external coaxial attachment which is manufactured and examined in a nozzle and a diffuser positioning. The impact on the homogeneity of Ti and  (Formula presented.)  films is examined using profilometry and spectral ellipsometry. Our results demonstrate that the use of the nozzle attachment significantly enhances film homogeneity from about 3  (Formula presented.)  to more than 12  (Formula presented.). It also secures better process control in terms of oxygen stoichiometry and film thickness. Some crucial general issues of the reactive GFS process are discussed.