Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN 2

Abstract

Epitaxial layers of ZnSiN 2, ZnGe 0.65Si 0.35N 2, and ZnGe 0.31Si 0.69N 2 grown on Al 2O 3 substrates were implanted at 350°C with high doses (5×10 16cm -2) of Mn + ions and annealed at 700°C. The implanted region did not appear to become amorphous and showed strong selected area diffraction patterns. Hysteresis was observed in magnetization versus field curves from all of the implanted samples. Differences in field-cooled and zero field-cooled magnetization persisted to temperatures of ∼200 K for ZnSiN 2, and ∼280 K for both ZnGe 0.31Si 0.69N 2 and ZnGe 0.69Si 0.31N 2. The results are consistent with recent magnetic data from (Zn xMn 1-x)GeP 2, ZnSnAs 2 and (Cd xMn 1-x)GeP 2 and suggest that this class of materials may be promising for dilute magnetic semiconductor applications. © 2002 American Institute of Physics.