Photoelectrochemical properties of InGaN for H2 generation from aqueous water

Abstract

The photoelectrochemical properties of InxGa1-xN (x = 0.02 and 0.09) were compared with those of GaN. The band-edge potentials of InxGa1-xN were determined by the Mott-Schottky plot for the first time. The gas generation from a counterelectrode using the In 0.02Ga0.91N working electrode was the highest of the three samples. Band-edge potentials and the light absorption of a working photoelectrode presumably affect the gas generation efficiency. © 2005 The Japan Society of Applied Physics.