Abstract
A large variation in the dispersion data for AlxGa1.0-xN epitaxial layers is presented. An experimental study is conducted which no(λ) and ne(λ) were measured to an accuracy of approximately ±0.01 for five AlxGa1.0-xN MOCVD-grown layers on sapphire substrates with 450
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CITATION STYLE
APA
Bergmann, M. J., Özgür, Ü., Casey, H. C., Everitt, H. O., & Muth, J. F. (1999). Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers. Applied Physics Letters, 75(1), 67–69. https://doi.org/10.1063/1.124278
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