12W Broad Area Semiconductor Amplifier with Diffraction Limited Optical Output

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Abstract

Broad area travelling wave GaAIAs SQW optical amplifiers have been fabricated and characterised. Using a 600µm wide and 1000µm long double pass amplifier, 12 W of peak pulsed output power was achieved with a 0.08° wide diffraction limited far-field lobe. Small signal gain of 31 dB was measured in a 400µm wide active area device. © 1991, The Institution of Electrical Engineers. All rights reserved.

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Goldberg, L., Weller, J. F., Mehuys, D., Welch, D. F., & Scifres, D. R. (1991). 12W Broad Area Semiconductor Amplifier with Diffraction Limited Optical Output. Electronics Letters, 27(11), 927–929. https://doi.org/10.1049/el:19910580

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