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Capacitance-Voltage and Interface State Density Characteristics of GaAs and InGaAs MOS Capacitors Incorporating a PECVD SiN Dielectric

  • O'Connor E
  • Djara V
  • Monaghan S
  • et al.
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Abstract

Capacitance-Voltage and Interface State Density Characteristics of GaAs and InGaAs MOS Capacitors Incorporating a PECVD SiN Dielectric. [ECS Transactions 35, 415 (2011)]. Eamon O'Connor, Vladimir Djara, Scott Monaghan, Paul Hurley, Karim Cherkaoui. Abstract. ...

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O’Connor, E., Djara, V., Monaghan, S., & Hurley…, P. (2011). Capacitance-Voltage and Interface State Density Characteristics of GaAs and InGaAs MOS Capacitors Incorporating a PECVD SiN Dielectric. Link.Aip.Org. Retrieved from http://link.aip.org/link/abstract/ECSTF8/v35/i3/p415/s1

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