Abstract
The stress-induced failures of Al-Si and Al-Si-Cu interconnects are examined and the microstructure of these films is correlated with the failures. A phenomenological model which can explain the observed open failures is proposed. The effect of adding Cu on open failures is discussed. Experimental results are presented.
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CITATION STYLE
APA
Mayumi, S., Umemoto, T., Shishino, M., Nanatsue, H., Ueda, S., & Inoue, M. (1987). EFFECT OF CU ADDITION TO AL-SI INTERCONNECTS ON STRESS INDUCED OPEN-CIRCUIT FAILURES. In Annual Proceedings - Reliability Physics (Symposium) (pp. 15–21). IEEE. https://doi.org/10.1109/irps.1987.362149
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