Pixel-to-Pixel isolation by Deep Trench technology : Application to CMOS Image Sensor

Abstract

Deep Trench technology for CMOS image sensor was successfully developed and industrialized for best- in-class 1.4µm pixel Front-Side Illumination (FSI) technology. The performance achievements on QE both on and off-axis without any degradation of other pixel parameters show the need of a perfect pixel isolation for better color fidelity. Comparison with other pixel isolation architectures show that Deep Trench is the best approach to suppress electrical crosstalk.