A zero-mask one-time programmable memory array for RFID applications

Abstract

A CMOS-compatible One-Time Programmable (OTP) memory array for RFID applications is presented. Three zero-mask Antifuse (AF) devices were evaluated on their feasibility for RFID applications. Among the AFs, the gate oxide AF device can be programmed using only 7μW of peak power and was chosen to form the RFID memory array. A memory array architecture is presented based on a compact 2-transistor cell, together with a programming circuit that does not require special high voltage transistors and consumes zero DC current during programming. The device structures were fabricated in 0.18μm process and were experimentally verified, while circuit simulations were performed using TSMC 0.18μm model on Cadence Analog Artist. © 2006 IEEE.